Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films
- 24 January 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (4) , 466-468
- https://doi.org/10.1063/1.125789
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Deep acceptors trapped at threading-edge dislocations in GaNPhysical Review B, 1998
- The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaNApplied Physics Letters, 1998
- Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor depositionApplied Physics Letters, 1998
- Scattering of electrons at threading dislocations in GaNJournal of Applied Physics, 1998
- Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaNJapanese Journal of Applied Physics, 1998
- InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrateApplied Physics Letters, 1998
- Theory of Threading Edge and Screw Dislocations in GaNPhysical Review Letters, 1997
- Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxyApplied Physics Letters, 1997
- Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor depositionApplied Physics Letters, 1997
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995