Impurity concentration dependent density of states and resulting fermi level for silicon
- 31 May 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (5) , 407-416
- https://doi.org/10.1016/0038-1101(71)90191-2
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Impurity concentration dependence of the density of states in semiconductorsSolid-State Electronics, 1971
- Investigation of current-gain temperature dependence in silicon transistorsIEEE Transactions on Electron Devices, 1969
- The temperature dependence of ideal gain in double diffused silicon transistorsIEEE Transactions on Electron Devices, 1968
- Broadening of Impurity Bands in Heavily Doped SemiconductorsPhysical Review B, 1965
- Thomas-Fermi Approach to Impure Semiconductor Band StructurePhysical Review B, 1963
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960
- Low-temperature hall coefficient and conductivity in heavily doped siliconJournal of Physics and Chemistry of Solids, 1960
- Impurity Band Conduction in Germanium and SiliconPhysical Review B, 1956
- Electrical Properties of-Type GermaniumPhysical Review B, 1954
- Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and PhosphorusPhysical Review B, 1949