Self-aligned NiSi2 electrode fabrication by MBE and its application to etched-groove Permeable Base Transistor (PBT)
- 1 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 490-493
- https://doi.org/10.1016/0022-0248(89)90450-8
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- A comparison of etched-geometry and overgrown silicon permeable base transistors by two-dimensional numerical simulationsIEEE Transactions on Electron Devices, 1983
- Growth of single-crystal CoSi2 on Si(111)Applied Physics Letters, 1982