Lattice Disorder in Ion-Implanted Boron-Doped Silicon
- 1 July 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (1) , 14-16
- https://doi.org/10.1063/1.1653724
Abstract
The lattice disorder produced in 40–600‐keV heavy ions implanted in undoped and heavily boron‐doped silicon has been measured using the channeling technique. The lattice disorder shows no significant dependence on the boron concentration of the implanted silicon for the variety of heavy ion species, doses, and implantation temperatures used.Keywords
This publication has 4 references indexed in Scilit:
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