Measurements of ionization produced in silicon crystals by low-energy silicon atoms
- 1 February 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review A
- Vol. 45 (3) , 2104-2107
- https://doi.org/10.1103/physreva.45.2104
Abstract
We measured the ionization and the fluctuations in ionization produced in a Si(Li) detector by silicon atoms at five particular kinetic energies ranging from about 4 to 109 keV. The method is simple and precise, yet untried until now, and provides excellent calibration points for silicon. Our results are in good agreement with the predictions of Lindhard et al. [Mat. Fys. Medd. 33, 10 (1963)].Keywords
This publication has 13 references indexed in Scilit:
- Searching for the cosmion by scattering in Si detectorsPhysical Review Letters, 1990
- Detection of Cosmic Dark MatterAnnual Review of Nuclear and Particle Science, 1988
- Laboratory Limits on Galactic Cold Dark MatterPhysical Review Letters, 1988
- Testing the weakly interacting, massive particle explanation of the solar neutrino puzzle with conventional silicon detectorsThe Astrophysical Journal, 1988
- Bolometric detection of neutrinosPhysical Review Letters, 1985
- Detectability of certain dark-matter candidatesPhysical Review D, 1985
- Band-Gap Effects in the Stopping ofAtoms in GermaniumPhysical Review Letters, 1968
- Measurement of the Energy Loss of Germanium Atoms to Electrons in Germanium at Energies Below 100 keVPhysical Review Letters, 1965
- Measurement of the Energy Loss of Germanium Atoms to Electrons in Germanium at Energies Below 100 keVPhysical Review Letters, 1965
- Ionization Produced by Energetic Silicon Atoms within a Silicon LatticePhysical Review B, 1965