Effects of proton irradiation on AlGaN/InGaN/GaNgreen lightemitting diodes
- 3 July 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (14) , 1252-1254
- https://doi.org/10.1049/el:19970816
Abstract
The influence of proton irradiation on properties of commercial single-quantum-well AlGaN/InGaN/GaN green-light emitting diodes is studied. A dose of 2.3 Mrad degraded the room-temperature light emission from the irradiated area of the device, while the electrical device characteristics remain practically unchanged. At low temperatures (≃15 K), however, the light emission recovers almost entirely, indicating the formation of a nonradiative recombination channel within the active layer of the device.Keywords
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