Boron Doping Effect on Silicon Film Deposition in the Si2 H 6 ‐ B 2 H 6 ‐ He Gas System
- 1 August 1986
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 133 (8) , 1721-1724
- https://doi.org/10.1149/1.2109002
Abstract
Heavily boron‐doped silicon films are deposited in the temperature range 520°–665°C in the gas system. The effects of boron doping on the deposition rate and properties of silicon films are investigated and compared with those of phosphorus doping. The deposition rate increases with the addition of , and tne deposition rate increment is proportional to power of the boron concentration in silicon film and to the partial pressure of . Boron is deposited independently without the influence of silicon deposition. The amorphous‐crystalline transition temperature is decreased with incorporating boron in silicon film except for the higher boron concentration than . For the higher boron concentration, crystallization is suppressed by incorporating boron.Keywords
This publication has 0 references indexed in Scilit: