Measurement of electron and hole impact ionization coefficients for SiC
- 22 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- High-field fast-risetime pulse failures in 4H- and 6H-SiC pn junction diodesJournal of Applied Physics, 1996
- A simple edge termination for silicon carbide devices with nearly ideal breakdown voltageIEEE Electron Device Letters, 1994
- SiC devices: physics and numerical simulationIEEE Transactions on Electron Devices, 1994
- Comparison of 6H-SiC, 3C-SiC, and Si for power devicesIEEE Transactions on Electron Devices, 1993