DFB-LD/modulator integrated light source by bandgap energy controlled selective MOVPE

16 January 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (2) , 153-154
https://doi.org/10.1049/el:19920095

Abstract

The bandgap energy of an In/InP multiquantum well structure, selectively grown by MOVPE, was controlled along the waveguide direction by controlling the mask stripe width. A butt-jointless DFB-LD/modulator light source was fabricated by using this technique.

Keywords

DFB LASER DIODE
MQW
WAVEGUIDE
MASK STRIPE WIDTH
IN-INP MULTIQUANTUM WELL STRUCTURE
INTEGRATED LIGHT SOURCE
INP-INGAAS-INGAASP
BANDGAP ENERGY CONTROLLED
BUTT-JOINTLESS CONFIGURATION
DFB-LD/MODULATOR
SELECTIVE MOVPE
SEMICONDUCTOR LASERS

This publication has 1 reference indexed in Scilit:

Semiconductor photonic integrated circuit for high-density WDM light source
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1990