Super-scaled InP HBTs for 150 GHz circuits
- 22 March 2004
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 30.1.1-30.1.4
- https://doi.org/10.1109/iedm.2003.1269378
Abstract
The development of InP heterojunction bipolar transistors (HBTs) with the emitter feature size less than 0.25 /spl mu/m is described. The key technical challenges in scaling to this dimension are reviewed and the technology approaches are enumerated. The development of these super-scaled InP HBTs is expected to enable mixed signal circuits with clock speeds in excess of 100 GHz.Keywords
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