Multiplication in collector junctions of silicon n-p-n and p-n-p transistors
- 1 May 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 17 (5) , 420-423
- https://doi.org/10.1109/T-ED.1970.16999
Abstract
The values 1-1/Mfor both electrons and holes, whereMis the multiplication factor, have been calculated in three different silicon p-n junctions. The logarithmic plot of 1 - 1/Mversus the normalized voltageV/V_{B}is well approximated by a straight line for 0.1 > 1 -1/M> 0.005. This range corresponds to the useful range of α0for most bipolar transistors. An empirical expression has been obtained for the ratioV_{CEO}/V_{CBO}within this range.Keywords
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