Photoluminescent detection of the impurity band in Si(P)
- 31 December 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 18 (1) , 93-95
- https://doi.org/10.1016/0038-1098(76)91408-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Simultaneous luminescence due to excitons, condensation and free electrons phases in siliconSolid State Communications, 1975
- Electron–Hole Droplets in Semiconducting and Metallic SiliconCanadian Journal of Physics, 1974
- Effects of Doping on the Condensed Electron–Hole State in Germanium and SiliconPhysica Status Solidi (b), 1974
- Radiative Recombination in Highly Doped GermaniumPhysica Status Solidi (b), 1969
- Semiconductor-to-Metal Transition in-Type Group IV SemiconductorsReviews of Modern Physics, 1968
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967
- The energy spectrum of disordered systemsAdvances in Physics, 1964
- Theory of Impurity Band Conduction in SemiconductorsProgress of Theoretical Physics, 1961
- ON THE TRANSITION TO METALLIC CONDUCTION IN SEMICONDUCTORSCanadian Journal of Physics, 1956
- CXLIII. On conduction in impurity bandsJournal of Computers in Education, 1953