Molecular beam epitaxial growth and transport properties of modulation-doped AlGaAs-GaAs heterostructures
- 15 February 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (4) , 411-413
- https://doi.org/10.1063/1.95916
Abstract
Mobilities and sheet carrier densities of single interface, modulation-doped AlGaAs-GaAs heterostructures depend on the structure and molecular beam epitaxial growth parameters. Variation of the thickness of the undoped spacer between 20 and 360 Å gave electron densities in the range 1012–2×1011 cm−2 in two-dimensional electron gases. Thick spacers resulted in high 4.2-K mobilities of 1.2×106 cm2/Vs in dark and 1.8×106 cm2/Vs under illumination with corresponding channel densities of 2.3×1011 cm−2 and 3.9×1011 cm−2, respectively. Two-dimensional hole gases had mobilities of 83 000 cm2/Vs and hole concentrations of 2.7×1011 cm−2 at 4.2 K.Keywords
This publication has 6 references indexed in Scilit:
- Optimisation of modulation-doped heterostructures for TEGFET operation at room temperatureElectronics Letters, 1984
- Novel physics in two dimensions with modulation-doped heterostructuresSurface Science, 1984
- Transport properties of selectively doped GaAs-(AlGa)As heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1984
- Dependence of electron mobility in modulation-doped GaAs-(AlGa)As heterojunction interfaces on electron density and Al concentrationApplied Physics Letters, 1981
- High mobilities in AlxGa1−xAs-GaAs heterojuntionsApplied Physics Letters, 1980
- High mobility of two-dimensional electrons at the GaAs/n-AlGaAs heterojunction interfaceApplied Physics Letters, 1980