Fourier-transformation analysis of deep level transient signals in semiconductors
- 31 July 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (7) , 689-694
- https://doi.org/10.1016/0038-1101(83)90026-6
Abstract
No abstract availableKeywords
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- Constant-capacitance DLTS measurement of defect-density profiles in semiconductorsJournal of Applied Physics, 1979
- Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductorsApplied Physics A, 1977
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974