Gate-Voltage Studies of Discrete Electronic States in Al Nanoparticles

Preprint

12 January 1997

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9701081

Abstract

We have investigated the spectrum of discrete electronic states in single, nm-scale Al particles incorporated into new tunneling transistors, complete with a gate electrode. The addition of the gate has allowed (a) measurements of the electronic spectra for different numbers of electrons in the same particle, (b) greatly improved resolution and qualitatively new results for spectra within superconducting particles, and (c) detailed studies of the gate-voltage dependence of the resonance level widths, which have directly demonstrated the effects of non-equilibrium excitations.

Keywords

DISCRETE ELECTRONIC STATES
GATE VOLTAGE STUDIES
ELECTRONIC STATES
AL NANOPARTICLES
SUPERCONDUCTING
VOLTAGE STUDIES
NANOPARTICLES

All Related Versions

Version 1, 1997-01-12, ArXiv
Published version: Physical Review Letters, 78 (21), 4087.

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