Preparation and properties of amorphous silicon films produced using electron cyclotron resonance plasma

1 January 1991

proceedings article
Published by AIP Publishing in AIP Conference Proceedings

Vol. 234 (1) , 234-240
https://doi.org/10.1063/1.41033

Abstract

Electron‐cyclotron‐resonance (ECR) plasma offers a potentially better way of controlling the growth chemistry of a‐Si:H. Such control can be expected to improve the microstructure of a‐Si:H, and hence its stability. In this paper, we report on the preparation and properties of a‐Si:H films produced using a remote ECR plasma at low pressures. It is shown that the ECR‐ a‐Si:H films have electronic properties comparable to glow‐discharge produced films. The stability of ECR‐films appears to be superior to glow‐discharge‐films.

Keywords

DEGRADATION
FILM GROWTH
DARK CONDUCTIVITY
SILICON
AMORPHOUS STATE
HYDROGEN ADDITIONS
ELECTRON CYCLOTRON−RESONANCE
ELECTRICAL PROPERTIES
ACTIVATION ENERGY
PHOTOCONDUCTIVITY
ENERGY GAP

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