Dislocation-limited minority-carrier lifetime in n -type GaP
- 16 September 1976
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 12 (19) , 503-504
- https://doi.org/10.1049/el:19760381
Abstract
Minority hole lifetimes as high as 2.5 μs have been reproducibly obtained in epitaxial GaP layers grown by an isothermal liquid-phase technique. In this material, the measured lifetimes are shown to be controlled by the dislocation density ρD in the samples when ρD > 5 × 104 cm−2. A theory is presented which shows that, when the lifetime is dislocation limited, its value is close to a minimum possible value for recombination at the dislocation cores.Keywords
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