Activation of Zn acceptors in AlGaInP epitaxial layers grown on misoriented substrates by metal organic chemical vapour deposition
- 12 March 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (6) , 585-587
- https://doi.org/10.1049/el:19920369
Abstract
Activation of the Zn acceptors in AlGaInP epitaxial layers grown on misoriented substrates by metal organic chemical vapour deposition (MOCVD) has been successfully improved using post-heat treatment. The p-type carrier concentration and electrical activity in the (Al0.65Ga0.35)0.5In 0.5P layers were 1.8 × 1016cm-3 and 0.7, respectively. Activation of the Zn acceptors was found to be attributable to the hydrogen in the AIGaInP layer.Keywords
This publication has 1 reference indexed in Scilit:
- 633 nm CW operation of GaInP/AlGaInP laser-diodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990