Realistic Tight-Binding Calculations of Surface States of Si and Ge (111)
- 24 June 1974
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 32 (25) , 1433-1436
- https://doi.org/10.1103/physrevlett.32.1433
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Tight-binding calculations of surface states of Si(111)Solid State Communications, 1974
- Metastable phase ofPhysical Review B, 1974
- Surface and Bulk Contributions to Ultraviolet Photoemission Spectra of SiliconPhysical Review Letters, 1974
- Surface Potential, Charge Density, and Ionization Potential for Si(111)-a Self-Consistent CalculationPhysical Review Letters, 1974
- High-Resolution Band Structure and thePeak in GePhysical Review Letters, 1973
- Excitonic instabilities, vacancies, and reconstruction of covalent surfacesSurface Science, 1973
- Surface States and Surface Bonds of Si(111)Physical Review Letters, 1973
- Surface-State Transitions of Silicon in Electron Energy-Loss SpectraPhysical Review Letters, 1973
- Nonlocal Pseudopotential for GePhysical Review Letters, 1973
- First-Principles Calculation of the Bulk Modulus of DiamondPhysical Review B, 1970