InGaAs/AlAs/InGaAsP resonant tunneling bipolar transistors grown by chemical beam epitaxy
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
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- A resonant-tunneling bipolar transistor (RBT): A proposal and demonstration for new functional devices with high current gainsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986