Galvanomagnetic Phenomena in High Electric Fields
- 15 August 1963
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 131 (4) , 1520-1524
- https://doi.org/10.1103/physrev.131.1520
Abstract
The Hall coefficient in a many-valley semiconductor is calculated for high electric fields and is shown to be independent of the electric field. For silicon we find and , where is the Hall coefficient for the current in the [100] direction, etc. For germanium we find . Distribution functions for hot electrons in high magnetic fields are calculated at high and low temperatures for acoustical phonon scattering.
Keywords
This publication has 9 references indexed in Scilit:
- Noise Temperature of Hot Electrons in GermaniumPhysical Review Letters, 1962
- Distribution Functions for Hot Electrons in Many-Valley SemiconductorsPhysical Review B, 1961
- Galvanomagnetic Effects in Semiconductors at High Electric FieldsPhysical Review B, 1961
- Variation of Hall Mobility of Carriers in Nondegenerate Semiconductors with Electric FieldPhysical Review B, 1958
- Quantum Theory of Galvanomagnetic EffectsPhysical Review B, 1958
- The influence of interelectronic collisions on conduction and breakdown in covalent semi-conductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1957
- Field Dependence of MagnetoconductivityPhysical Review B, 1956
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956
- On the Conductivity of Non-polar Crystals in the Strong Electric Field, IProgress of Theoretical Physics, 1954