Abstract
The Hall coefficient in a many-valley semiconductor is calculated for high electric fields and is shown to be independent of the electric field. For silicon we find R100R111=0.9 and R110R111=0.85, where R100 is the Hall coefficient for the current in the [100] direction, etc. For germanium we find R111R100=0.68. Distribution functions for hot electrons in high magnetic fields are calculated at high and low temperatures for acoustical phonon scattering.