Temperature variation of energy gaps and deformation potentials in CuGa(SzSe1−z)2 semiconductor alloys
- 1 April 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (7) , 2739-2743
- https://doi.org/10.1063/1.342762
Abstract
Measurements of wavelength modulated reflectance in the temperature range 10–300 K have been made on single crystals of the system CuGa(SzSe1−z)2. For each sample, values of EA,EB, and EC corresponding to the three valence to conduction bands transitions have been determined. These results are analyzed using an equation proposed by Manoogian and Woolley [Can. J. Phys. 6 2, 285 (1984)]. From the analysis of the variation of the EA energy gap, with temperature and pressure the valence and conduction band, deformation potentials have been estimated for the present compounds and alloys.This publication has 15 references indexed in Scilit:
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