Correlation between Lithium Drift Mobility and Minority-Carrier Drift Mobility in Germanium
- 1 June 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 13 (3) , 370-372
- https://doi.org/10.1109/tns.1966.4324121
Abstract
The minority-carrier drift mobility of driftable and nondriftable germanium was measured in an effort to determine the presence of an impurity which reduced the lithium drift mobility but did not affect the resistivity and lifetime of some of the material used to make lithium-drift detectors. The measurements were made at 77°K where the mobility is limited by impurity scattering rather than lattice scattering. The mobility was measured as a function of temperature for five samples of Ge which had varying lithium drift mobilities. Good correlation was found between the driftability of the material and the minority-carrier drift mobility at 77°K. Estimated impurity levels in the range of 1014-1015/cm3 apparently reduce the effective lithium mobility, while impurity concentrations greater than 5 X 1015 make the Ge unsuitable for making lithium-drift detectors. A mass-spectrometer analysis indicated that the impurity apparently has a mass number less than Mg; oxygen is a likely possibility due to its known behavior with Li in silicon.Keywords
This publication has 7 references indexed in Scilit:
- Ambient Storage Effects and Mounting Problems of Very Large Volume Ge LID DetectorsIEEE Transactions on Nuclear Science, 1966
- Stabilization of Lithium-Drifted Radiation DetectorsIEEE Transactions on Nuclear Science, 1964
- Study of Li–O Interaction in Si by Ion DriftJournal of Applied Physics, 1961
- A theory of the effects of carrier-carrier scattering on mobility in semiconductorsJournal of Physics and Chemistry of Solids, 1960
- The drift mobility of electrons and holes in germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1960
- Drift Mobilities in Semiconductors. I. GermaniumPhysical Review B, 1953
- Neutral Impurity Scattering in SemiconductorsPhysical Review B, 1950