Optimum switching time for a beam-size switch (250 nm ⇔ 1000 nm) in a vector scan electron beam lithography machine
- 31 January 1994
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 23 (1-4) , 77-80
- https://doi.org/10.1016/0167-9317(94)90108-2
Abstract
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