Theory of generation-recombination noise in the channel of junction field-effect transistors

1 August 1975

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 22 (8) , 616-617
https://doi.org/10.1109/T-ED.1975.18188

Abstract

A new derivation is given for the noise in JFET's stemming from generation-recombination or trapping processes in the channel. For the case of a delta function carrier covariance, the result is the same as that of van der Ziel. However, the present derivation is more direct and can be easily extended to more general cases.

Keywords

FUNCTION
JUNCTION FIELD
VAN DER
GENERATION RECOMBINATION
NEW DERIVATION
RECOMBINATION NOISE
DER ZIEL
JFET'S STEMMING

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