Mechanism of epitaxial growth of monolayer CaF on Si(111)-(7×7)
- 14 March 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 72 (11) , 1718-1721
- https://doi.org/10.1103/physrevlett.72.1718
Abstract
Using scanning tunneling microscopy, the epitaxial growth of a monolayer of CaF on the Si(111)-7×7) surface has been studied. We observe how the Si atoms of the 7×7 structure rearrange into a bulklike structure and find that four excess Si atoms per 7×7 unit cell are produced in the transition to the bulklike structure. These excess Si atoms seem to remain in the epitaxial CaF layer, creating defects.Keywords
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