Large area, 1.3 kV, 17 A, bipolar junction transistors in 4H-SiC

Publisher Website

1 March 2004

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/ispsd.2003.1225248

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

10 A, 2.4 kV Power DiMOSFETs in 4H-SiC
IEEE Electron Device Letters, 2002
1800 V NPN bipolar junction transistors in 4H-SiC
IEEE Electron Device Letters, 2001