Simple resistance model fit to the oxidation of a vanadium film into VO2
- 1 January 1988
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 6 (1) , 123-127
- https://doi.org/10.1116/1.574993
Abstract
A simple resistance model is used to describe the in situ resistance changes which occur during the oxidation of a thin vanadium film to VO2. Separation of the resistance characteristics into two regions proves useful in the interpretation of experimental data. The time dependence of the vanadium dioxide thickness follows a tn behavior where 1.5<n<3, depending on the oxidation conditions of pressure and temperature.Keywords
This publication has 0 references indexed in Scilit: