Dislocation Reduction on Simox Substrates by Using Multiple Implants
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- SIMOX SOI for integrated circuit fabricationIEEE Circuits and Devices Magazine, 1987
- A model for the oxidation of silicon by high dose oxygen implantationThin Solid Films, 1985
- An Investigation of the Properties of an Epitaxial Si Layer on a Substrate with a Buried SiO2 Layer Formed by Oxygen-Ion ImplantationJapanese Journal of Applied Physics, 1982