Hot Electron Effects in Infrared Multiple-Quantum-Well Phototransistor

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Abstract
This paper presents a theoretical analysis of physical mechanisms responsible for operation and performance, in particular, optical gain, of infrared multiple-quantum-well (MQW) photodetectors. The influence of the device structure on the distribution of potential, which, in turn, determines the carrier injection and transport properties, is discussed. We studied the hot electron effects in the MQW phototransistor, which has wide triangular emitter and collector barriers and an equipotential base. It is shown that the hot electron transport in the base, provided by a wide gap emitter, can give rise to a very high values of optical gain, as high as 1000.

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