Micro-structure and magnetic properties of perpendicular magnetized Co-CoO sputtered films.

Abstract
Electrical resistivity (ρ) of reactive RF sputtered CO-CoO films increases and the temperature coefficient of resistivity (TCR) decreases with the formation of CoO. For films of which saturation magnetization (Ms) is more than 670 emu/cm3, ρ decreases irreversibly above 370 K by deoxidization. For films of which Ms is less than 470 emu/cm3, ρ increases irreversibly above 420K. After the irreversible increase of ρ, coercivity (Hc) and rectangular ratio of hysteresis loop perpendicular to the film plane increase, and Hc parallel to the film plane decreases.

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