Level crossing of nanometer sized InAs islands in GaAs
- 31 December 1996
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 40 (1-8) , 367-371
- https://doi.org/10.1016/0038-1101(95)00330-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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