Electron density of states in a Gaussian random potential: Path-integral approach
- 15 February 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 19 (4) , 2266-2275
- https://doi.org/10.1103/physrevb.19.2266
Abstract
The behavior of the electron density of states in a Gaussian random potential is studied in the limit of low energies using the Feynman path-integral method. Two different impurity potentials are considered: the Gaussian potential and the screened Coulomb potential. It is shown that the density of states deep in the tail, in three dimensions, can be expressed analytically in the form proposed by Halperin and Lax, , where is proportional to the density of impurities and to the square of the strength of the impurity potential. For a Gaussian potential with autocorrelation length , we find and , where and , with being the energy below the mean potential in units of . For screened Coulomb potential with inverse screening length , we find and where and , with satisfying the equation , being the energy below the mean potential in units of and denoting the parabolic cylinder function. Numerical results and calculated curves are presented. A detailed comparison with the minimum counting method of Halperin and Lax is given.
Keywords
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