Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs
- 24 April 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (17) , 1696-1698
- https://doi.org/10.1063/1.101306
Abstract
Enhancement of Schottky barrier height of Ti‐Pt‐Au on n‐type GaAs was obtained by heavily (2×1018 cm−3) counter doping the near‐surface region of the substrate. The p‐type region was produced by recoil implantation of Mg from a Mg thin film (300 Å) irradiated by a 60 keV As+ beam. The film was subsequently chemically etched. The recoil‐implanted samples showed an enhancement of 140 meV in the Schottky barrier height following rapid thermal annealing in an AsH3 furnace at 850 °C for nominal zero second.Keywords
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