Effects of Water Vapor on Oxidation of Silicon Carbide
- 2 June 1961
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 44 (6) , 258-261
- https://doi.org/10.1111/j.1151-2916.1961.tb15374.x
Abstract
The rate of oxidation of silicon carbide was studied at different partial pressures of water vapor. The diffusion‐rate constant was found to vary with the logarithm of the partial pressure of water vapor according to the theory of thin‐film oxidation as proposed by Engell and Hauffe. The products of oxidation were cristobalite and tridymite, depending on the temperature. The diffusing species appeared to be the same in the presence of partial pressures of water vapor and in the presence of partial pressures of oxygen.Keywords
This publication has 9 references indexed in Scilit:
- Effects of Oxygen Partial Pressure on the Oxidation of Silicon CarbideJournal of the American Ceramic Society, 1960
- Oxidation of Silicon CarbideJournal of the American Ceramic Society, 1959
- The Role of Steam, and the Effect of Colour and Polytype of the Crystal on the Oxidation of Silicon Carbide PowdersJournal of the Ceramic Association, Japan, 1959
- Oxidation Behavior of Silicon CarbideJournal of the American Ceramic Society, 1958
- The High Temperature Oxidation of SiliconThe Journal of Physical Chemistry, 1957
- A Study of the Oxidation of Pure Silicon-carbide PowdersJournal of the Ceramic Association, Japan, 1957
- Adsorption Kinetics. I. The System of Alkali Atoms on Tungsten1Journal of the American Chemical Society, 1955
- Dynamic Mechanism of Heterogeneous Catalysis - Ionic MechanismsIndustrial & Engineering Chemistry, 1953
- The Oxidation of Silicon at High TemperaturesJournal of the American Chemical Society, 1951