Selenium implanation into silicon studied by DLTS technique
- 15 October 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (8) , 525-527
- https://doi.org/10.1063/1.89763
Abstract
Deep‐level transient spectroscopy (DLTS) has been used to determine the activation energy and spatial distribution of the electron traps introduced n‐type silicon implanted with 5×1010Se ions/cm2 at 800 keV. Radiation damage levels were demonstrated to be present up to a 600 °C anneal. After 700 °C anneal, two deep levels were found at Ec−0.225 eV and Ec−0.485 eV. The in‐depth distributions of the Ec−0.225 eV level after 600 °C anneal and of the two levels after the 700 °C anneal were determined. So, it was found that selenium is a fast diffuser and that each implanted Se ion forms one trap with two levels.Keywords
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