Microwave multiple-state resonant tunneling bipolar transistors
- 1 May 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (5) , 219-221
- https://doi.org/10.1109/55.31726
Abstract
Fabrication and microwave performance of a multiple-state resonant-tunneling bipolar transistor (RTBT) are presented. This transistor exhibits a maximum DC current gain of 60 at room temperature and a cutoff frequency of 24 GHz. Frequency multiplication by a factor of five has been demonstrated with a single transistor.<>Keywords
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