Film growth of Cd1-xMnxTe on GaAs by ICB technique.
- 1 January 1990
- journal article
- Published by The Magnetics Society of Japan in Journal of the Magnetics Society of Japan
- Vol. 14 (2) , 161-164
- https://doi.org/10.3379/jmsjmag.14.161
Abstract
We investigated the crystallographic and magneto- optical properties of Cd1-xMnxTe films grown on (100) GaAs substrates. The growth of either (111) or (100) oriented Cd1-xMnxTe film on a (100) GaAs substrate was successfully controlled by changing the electron current Ie for ionization or the acceleration voltage Va. This different film growth was considered a result of a change in nucleus formation in the initial stage of film growth by the electric charge and kinetic energy of ionized clusters. From measuremerits of the Kerr rotation spectra, it was found that the Faraday rotation of the films on a GaAs substrate exhibited the same characteristics as those on a sapphire substrate.Keywords
This publication has 12 references indexed in Scilit:
- Diluted magnetic semiconductorsJournal of Applied Physics, 1988
- Faraday effects due to excitons in Cd1-xMnxTe films.Journal of the Magnetics Society of Japan, 1988
- Epitaxial growth of Cd1−xMnxTe films by ionized-cluster beams and their magneto-optical propertiesJournal of Applied Physics, 1987
- Epitaxial growth of CdTe on GaAs by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1986
- (100) superlattices of CdTe-Cd0.76Mn0.24Te on (100)GaAsApplied Physics Letters, 1985
- Temperature independent Faraday rotation near the band gap in Cd1−xMnxTeApplied Physics Letters, 1985
- Aluminium epitaxy on Si(111) and Si(100) using an ionized cluster beamThin Solid Films, 1985
- Cd1−xMnxTe-CdTe multilayers grown by molecular beam epitaxyApplied Physics Letters, 1984
- Molecular beam epitaxy of Cd1−xMnxTeApplied Physics Letters, 1984
- Giant exciton Faraday rotation in Cd1−xMnxTe mixed crystalsSolid State Communications, 1978