Preamplifier Noise In Indium Antimonide Detector Systems

Publisher Website
Google Scholar
Abstract
Voltage noise measurements have been made at temperatures from 77 to 150 K with three JFET's and a preamplifier which closely resembles one used with InSb photovoltaic detectors. noise minima were detected with the three JFET's at temperatures of 100-115 K, but the level Df voltage noise for two of the three JFET's was found to be below the noise level of InSb detector systems.© (1980) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.