Electrical measurements in silicon under shock-wave compression
- 1 December 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (12) , 5007-5012
- https://doi.org/10.1063/1.1661061
Abstract
The electrical behavior of p‐type silicon in the (111) orientation was studied under shock stresses from 8 to 160 kbar. Positive electrical signals are induced in the crystals during passage of elastic shock waves. Maximum signal amplitude was detected below the Hugoniot elastic limit (55 kbar). Resistance‐vs‐stress measurements were made when the polarization signal was zero, i.e., no elastic waves were in the crystals. The resistance becomes very small near the elastic limit, indicating that a metallic state is reached. The relative resistance, R/Ro, then increases significantly at 133 kbar where a phase transition is indicated.This publication has 12 references indexed in Scilit:
- Axial Yield Strengths and Two Successive Phase Transition Stresses for Crystalline SiliconJournal of Applied Physics, 1971
- Electrical Signals in Dynamically Stressed Ionic Crystals: A Dislocation ModelJournal of Applied Physics, 1969
- Physical behavior of germanium under shock wave compressionJournal of Physics and Chemistry of Solids, 1966
- Shock-Induced Polarization in Plastics. II. Experimental Study of Plexiglas and PolystyreneJournal of Applied Physics, 1965
- Shock-Induced Polarization in Plastics. I. TheoryJournal of Applied Physics, 1965
- Shock-Induced LuminescenceJournal of Applied Physics, 1965
- Growth of the Cellular Slime Mold Polysphondylium pallidum in a Simple Nutrient MediumScience, 1963
- Pressure induced phase transitions in silicon, germanium and some III–V compoundsJournal of Physics and Chemistry of Solids, 1962
- Acoustoelectric EffectPhysical Review B, 1959
- Polymorphism of Iron at High PressureJournal of Applied Physics, 1956