Broadening mechanism in semiconductor (GaAs) lasers: Limitations to single mode power emission
- 1 October 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 14 (10) , 727-736
- https://doi.org/10.1109/jqe.1978.1069680
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Limitations of power outputs from continuously operating GaAs-Ga1−xAlxAs double-heterostructure lasersJournal of Applied Physics, 1976
- Calculations of the continuous-wave lasing range and light-output power for double-heterostructure lasersIEEE Journal of Quantum Electronics, 1975
- Gain spectra in GaAs double−heterostructure injection lasersJournal of Applied Physics, 1975
- Electron Scattering Times in GaAs Injection LasersJapanese Journal of Applied Physics, 1974
- Spectral hole-burning and nonlinear-gain decrease in a band-to-level transition semiconductor laserIEEE Journal of Quantum Electronics, 1973
- Electron energy relaxation times in GaAs and InPApplied Physics Letters, 1972
- Nonlinear Laser Noise and CoherenceJournal of Applied Physics, 1966
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- Infrared and Optical MasersPhysical Review B, 1958
- The Maser—New Type of Microwave Amplifier, Frequency Standard, and SpectrometerPhysical Review B, 1955