Self-consistent simulation of a high-power 73 GHz integrated IMPATT oscillator

27 September 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (20) , 1697-1698
https://doi.org/10.1049/el:19901084

Abstract

A quasistalic IMPATT diode model for fast time domain oscillator simulations is applied to the simulation of an integrated double drift diode IMPATT oscillator. Comparison with measurements yields agreement within 7 GHz in oscillation frequency and 20 mW in output power over the measured range of DC bias currents.

Keywords

SELF-CONSISTENT SIMULATION
QUASISTATIC IMPATT DIODE MODEL
20 MW
OUTPUT POWER
INTEGRATED DOUBLE DRIFT DIODE IMPATT OSCILLATOR
FAST TIME DOMAIN OSCILLATOR SIMULATIONS
OSCILLATION FREQUENCY
73 GHZ
7 GHZ
DC BIAS CURRENTS

This publication has 1 reference indexed in Scilit:

Chaotic behaviour of IMPATT diode oscillators
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002