Fermi level pinning at epitaxial Si on GaAs(100) interfaces

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Abstract
GaAs Schottky barrier contacts and metal‐insulator‐semiconductor structures that include thin epitaxial Si interfacial layers operate in a manner consistent with an unpinned Fermi level at the GaAs interface. These findings raise the question of whether this effect is an intrinsic property of the epitaxial GaAs(100)‐Si interface. We have used x‐ray photoemission spectroscopy to monitor the Fermi level position during in situ growth of thin epitaxial Si layers. In particular, films formed on heavily doped n‐ and p‐type substrates were compared so as to use the large depletion layer fields available with high impurity concentration as a field‐effect probe of the interface state density. The results demonstrate that epitaxial bonding at the interface alone is insufficient to eliminate Fermi level pinning, indicating that other mechanisms affect the interfacial charge balance in the devices that utilize Si interlayers.