Integrated Circuits Based on Amorphous Indium-Gallium-Zinc-Oxide-Channel Thin-Film Transistors
- 20 October 2006
- journal article
- Published by The Electrochemical Society in ECS Transactions
- Vol. 3 (8) , 293-300
- https://doi.org/10.1149/1.2356366
Abstract
Five-stage ring oscillators (ROs) composed of amorphous In-Ga- Zn-O (a-IGZO) channel TFTs were fabricated at room temperature with no post-deposition annealing. We observed oscillation of ROs with a variety of channel lengths and channel widths. A RO with channel lengths of 10 um operated at 21.5 kHz (propagation delay of 4.7 us / stage), when the external voltage of +18 V was supplied. A circuit simulation reproduced the measured output characteristics of ROs qualitatively, and also the simulated propagation delays agreed with the measured ones approximately.Keywords
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