Novel single-longitudinal-mode 1.5 μm GaInAsP/InP distributed reflector (DR) laser

31 March 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (7) , 435-437
https://doi.org/10.1049/el:19880295

Abstract

A novel single-longitudinal-mode laser aiming at high-power operation as well as high fabrication yield is proposed and was realised by employing a bundle-integrated-guide (BIG) structure for efficiently coupled active and passive distributed reflector regions. Low threshold current CW operation and an asymmetric emission property were obtained with a high submode suppression ratio (SMSR) of 38 dB at an output power level of 7 mW.

Keywords

BUNDLE-INTEGRATED-GUIDE
1.5 MICRON
III-V SEMICONDUCTORS
SUBMODE SUPPRESSION RATIO
OPTICAL COMMUNICATION EQUIPMENT
DISTRIBUTED REFLECTOR
INTEGRATED OPTICS
GAINASP-INP
SINGLE-LONGITUDINAL-MODE
SEMICONDUCTOR LASERS
HIGH FABRICATION YIELD
OUTPUT POWER LEVEL
HIGH-POWER OPERATION
7 MW
CAVITY RESONATORS
ASYMMETRIC EMISSION PROPERTY
CW OPERATION

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