Direct comparison of the electron-temperature model with the particle-mesh (Monte-Carlo) model for the GaAs MESFET
- 1 December 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (12) , 1942-1943
- https://doi.org/10.1109/T-ED.1982.21055
Abstract
Characteristics of a Schottky-barrier GaAs MESFET are calculated using the electron-temperature (ET) model, and the results are compared directly with previous particle-mesh computer models using Monte-Carlo techniques. Agreement is better than for any previous two-dimensional model and, in particular, the earlier field-dependent (FD) model is shown to predict much less current because of the neglect of velocity overshoot effects.Keywords
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