Electronic Transport Properties of ZrTiO4 at High Temperature

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Abstract
Electrical conductivities, using the four-probe dc method, have been measured for Zr1.012Ti0.988O4 and Zr1.009Ti0.986Y0.005O4 between 1073 and 1523 K from oxygen fugacity ( 1.013×105 Pa as a standard state) of 10-20 to 1. Thermoelectric power has also been measured for Zr1.012Ti0.988O4. Both n- and p-type conductivities are found with the dependence of -1/4 and 1/4 powers of p O2 , respectively, and no indication of an ionic conductivity is observed. A defect model has been proposed wherein an extrinsic oxygen vacancy formation is predominant, in which the concentration of oxygen vacancy is determined by the amount of lower-valent impurities or dopants, and excellent agreement is found between experimental and calculated results. The partial conductivity of electrons showed a strong correlation with the anomalous expansion of the c-axis.