Preparation of Crystalline Germanium Films on Metals
- 1 January 1963
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (1) , 225-227
- https://doi.org/10.1063/1.1729072
Abstract
Two methods of obtaining Ge films on tungsten having single‐crystalline regions up to 1 mm large are described. One consists in melting a quasi‐amorphous Ge film prepared by thermal evaporation with a scanning‐electron beam. In a second procedure a tungsten sheet is pulled from a Ge melt. Films prepared by both methods were used to form p‐n junctions. The I‐V characteristic of a tunnel diode, made by using a Ge film on tungsten is shown. The Ge films on tungsten, after melting and solidifying, are different from thermally evaporated epitaxial Ge films. The latter contain a high concentration of defects which makes junction formation difficult.This publication has 4 references indexed in Scilit:
- Epitaxy of Germanium Films on Germanium by Vacuum EvaporationJournal of Applied Physics, 1962
- Study of Electron Bombardment of Thin FilmsJournal of Applied Physics, 1961
- Germanium Films on Germanium Obtained by Thermal Evaporation in VacuumJournal of Applied Physics, 1961
- The Contamination in Evaporated Films by the Material of the SourceProceedings of the Physical Society. Section B, 1952