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Production and properties of Al
2
O
3
layers on silicon substrates
Home
Publications
Production and properties of Al
2
O
3
layers on silicon substrates
Production and properties of Al
2
O
3
layers on silicon substrates
SA
S. Alexandrova
S. Alexandrova
KA
K. Atanasova
K. Atanasova
MI
M. Ivanovich
M. Ivanovich
PK
P. Kamadjiev
P. Kamadjiev
KK
K. Kirov
K. Kirov
SS
S. Simeonov
S. Simeonov
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1 April 1976
journal article
Published by
Institution of Engineering and Technology (IET)
in
Electronics Letters
Vol. 12
(7)
,
169-170
https://doi.org/10.1049/el:19760132
Abstract
A method for preparation of thin Al
2
O
3
films using pyrolytic reactions is proposed and some electrical and optical properties of the films are investigated. The applicability of the films as an active dielectric in m.o.s. structures is discussed.
Keywords
PYROLYTIC REACTIONS
ACTIVE DIELECTRIC
THIN AL2O3 FILMS
ELECTRICAL PROPERTIES
SI SUBSTRATES
AL2O3 LAYERS
MOS STRUCTURES
OPTICAL PROPERTIES
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