Self-trapped holes in amorphous silicon dioxide
- 15 August 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (6) , 4224-4227
- https://doi.org/10.1103/physrevb.40.4224
Abstract
Electron-spin-resonance spectra tentatively attributed to self-trapped holes (STH’s) in amorphous silicon dioxide are reported and analyzed. Two types of STH’s were found in a numerical ratio ∼1:1 in all silica samples investigated (including high-OH flame hydrolytic, low-OH -plasma fused, sol-gel, and less pure isotopically enriched materials) following either 100-keV x-ray irradiation or 6.4-eV excimer-laser illumination at 77 K: , stable below ∼180 K, is suggested to comprise a hole trapped on a ‘‘normal’’ bridging oxygen in the glass network. , stable below ∼140 K, is provisionally ascribed to a hole trapped on two normal oxygens, in analogy with the center in alkali halides.
Keywords
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